Diffusion Sources for Silicon Doping

PDS® P-type boron nitride-based wafers offer low cost, non-toxic in-situ diffusion sources for doping silicon wafers. PDS® products eliminated the trade-off between throughput and uniformity. 

 

All grades of PDS® products are available in diameters up to 200 mm.  Use of PDS® products enable the users to change sources diameter with little or no change in the diffusion process.  Furthermore, Saint-Gobain Boron Nitride offers unparalleled technical guidance based on over 40 years of experience in diffusion technology.

    • Extreme flexibility that allows applications for many device structures, thereby eliminating capital expense in device conversion.
    • Improved yields and uniformity across the wafer, across a run and from run-to-run.
    • Precision chemical principles for predictability and repeatability through the controlled introduction of diffusion tube atmosphere.
    • H2-injection modulates the partial vapor pressure of the B2O3-HBO2 system for P-type, creating excellent uniformity and controlling the damage simultaneously for a low temperature process.
    • Non-toxic sources and safe to use.
    • Emitter
    • Base
    • Collector
    • Channel Stop
    • Isolation
    • Guard Rings
    • Resistor
    • Capacitor
    • Solar Cells
    • Source/Drain
    • Trench Structures
    • Power Transistors and Modules
    • Small-Signal or Switching Transistors
    • Diodes, Rectifiers and Thyristors
    • RF/Microwave Transistors
    • Amplifiers
    • Transformers
    • Transducer (sensors and detectors)

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