Diffusion Sources for Silicon Doping

PDS® P-type boron nitride-based wafers offer low cost, non-toxic in-situ diffusion sources for doping silicon wafers. PDS® products eliminated the trade-off between throughput and uniformity. 


All grades of PDS® products are available in diameters up to 200 mm.  Use of PDS® products enable the users to change sources diameter with little or no change in the diffusion process.  Furthermore, Saint-Gobain Boron Nitride offers unparalleled technical guidance based on over 40 years of experience in diffusion technology.

Features & Benefits
  • Extreme flexibility that allows applications for many device structures, thereby eliminating capital expense in device conversion.
  • Improved yields and uniformity across the wafer, across a run and from run-to-run.
  • Precision chemical principles for predictability and repeatability through the controlled introduction of diffusion tube atmosphere.
  • H2-injection modulates the partial vapor pressure of the B2O3-HBO2 system for P-type, creating excellent uniformity and controlling the damage simultaneously for a low temperature process.
  • Non-toxic sources and safe to use.
Key Applications
  • Emitter
  • Base
  • Collector
  • Channel Stop
  • Isolation
  • Guard Rings
  • Resistor
  • Capacitor
  • Solar Cells
  • Source/Drain
  • Trench Structures
  • Power Transistors and Modules
  • Small-Signal or Switching Transistors
  • Diodes, Rectifiers and Thyristors
  • RF/Microwave Transistors
  • Amplifiers
  • Transformers
  • Transducer (sensors and detectors)
Related Content

Boron Nitride Planar Diffusion Sources (PDS) are reliable and safe dopant sources for silicon wafers