Saint-Gobain's Boron Nitride Group, provides unmatched technology to the semiconductor market.
Combat® Boron Nitride Machinable Ceramic Components and PDS® Products (planar diffusion sources) are suited to applications such as N-Type and P-Type semiconductors and Ion implants.
Follows is a brief list of planar diffusion source applications.
Applications | N-Type | P-Type | Applications | N-Type | P-Type |
---|---|---|---|---|---|
Analog | • | • | Mixed Signal | • | • |
Base | • | MOSFET | • | ||
Buried Layer | • | Optoelectronics | • | • | |
Diode | • | • | P+ | • | |
Drain | • | P-Channel | • | ||
Etch Stop | • | Power Transistor | • | • | |
Gate | • | Rectifier | • | ||
Guard Rings | • | Sm. Sig. | • | ||
Isolation | • | Source | • | ||
MEMS | • | Telecom | • | ||
Mixed Signal | • | Thyristor | • | • | |
MOSFET | • | Transistor | • |
Semiconductor Applications
Saint-Gobain's Combat® Boron Nitride Machinable Ceramic Components, Grades A, HP, and AX05, have long been designed into the world's high-end ion implanters.
Where required, our Grades are machined to tight tolerances, withstand extreme temperatures and thermal shock, and have the purity required for semiconductor processing. We have supplied bulk materials for many machine shops for many years, in addition to supplying finished components direct from Saint-Gobain's in-house machine shops.