Diffusion Sources for Silicon Doping

PDS® Products P-type (Boron Nitride) and N-type (Silicon Phosphate based) offer low cost, in-situ and non-toxic diffusion sources for silicon wafers. PDS® Products eliminate the trade-off between throughput and uniformity.

All grades of PDS® Products are available in diameters up to 200 mm.  Use of PDS® Products enable the users to change sources diameter with little or no change in the diffusion process.  Furthermore, Saint-Gobain Advanced Ceramics Boron Nitride offers unparalleled technical guidance based on over 40 years of experience in diffusion technology.

Features & Benefits

• Extreme flexibility that allows applications for many device structures, thereby eliminating capital expense in device conversion.
• Improved yields and uniformity across the wafer, across a run and from run-to-run.
• Precision chemical principles for predictability and repeatability through the controlled introduction of diffusion tube atmosphere.
• H₂-injection modulates the partial vapor pressure of the B₂O₃-HBO₂ system for P-type, creating excellent uniformity and controlling the damage simultaneously for a low temperature process.
• Non-toxic sources and safe to use.

Key Applications

• Emitter
• Base
• Collector
• Channel Stop
• Isolation
• Guard Rings
• Resistor
• Capacitor
• Solar Cells
• Source/Drain
• Trench Structures

Devices

• Power Transistors and Modules
• Small-Signal or Switching Transistors
• Diodes, Rectifiers and Thyristors
• RF/Microwave Transistors
• Amplifiers
• Transformers
• Transducer (sensors and detectors)