Dielectric at High Frequencies

In various areas in industry, scientific research and medical technology, components are needed that are subject to high-frequency fields. A combination of low dielectric constant, low loss and high dielectric strength, all this over a large range of frequencies make Boron Nitride an ideal choice for use in hardware where high-frequency fields are present.

These applications aim to avoid signal or energy loss while utilizing the advantage of mechanical or thermal properties of the component. One such example is semiconductor processing in microwave plasma chambers, where the window must allow the field into the chamber without being directly heated by microwaves. At the same time, the window must withstand high temperature and corrosive plasma environment. Boron Nitride, due to its low-loss and high sputtering resistance, is ideal for such applications.

Another emerging application using low-loss properties of Boron Nitride is microwave sintering of ceramics. The sintering time in microwave sintering is a small fraction of that needed for conventional furnace sintering, along with much smaller average grain size and better strength.

Saint-Gobain's Combat® grade M and M26, with addition of SiO₂ in Boron Nitride, have enhanced dielectric properties, making these grades uniquely suitable and material of choice for high frequency applications.