Boron Nitride Products
PDS® Products
PDS® Planar Diffusion Sources

P-Type BN PDS® Product Sources

PDS P-Type

PDS® P-Type Product Sources

 

Saint-Gobain Advanced Ceramics is the leading supplier of solid planar diffusion sources to the semiconductor industry.  PDS® Products Boron Nitride P-Type Product sources are used for doping silicon wafers.

Sources for P-Type doping use hexagonal boron nitride powder, made by reacting boric acid and ammonia at high temperatures, as the starting material. Boron Nitride powder, in combination with other ingredients, is hot pressed to form billets, machined to the desired diameter and then sliced into wafers.

 

 

PDS® Products Boron Nitride P-Type Product Applications 

 Analog Sm. Sig. Diode
 Transistor Mixed Signal Power
 Optoelectronics Transistor Etch Stop
 Telecom MOSFET MEMS
 Thyristor Rectifier Isolation
 P-Channel Resistor Source
 Base Drain Guard Rings
 Gate P+ P-Well
 Buried Layer  

 

Processing Recommendation

BN-1250 planar diffusion sources were introduced 35 years ago for high temperature depositions.  Recently, we re-examined these recommendations, using the PDS products class 100 Cleanroom.  As a result, we have developed new instructions for use of BN-1250.  Diffusion processing now includes the use of 1% oxygen during the soak step. 

We have two documents incorporating the New Processing Recommendations at 1050°C and 1150°C (documents at right).

 

 

P-Type PDS® Product Advantages

  • Superior sheet resistance uniformity - particularly on large diameter silicon, higher yields
  • Excellent control of doping parameters 
  • Safest sources available - eliminate hazards of gas and liquid systems
  • Reduced maintenance - dopant glass transfers directly to the silicon, virtually no downtime for maintenance
  • Increased load capacity - higher throughput, up to 150 silicon wafers per run
  • Cost-effective - no additional expense to convert existing gas equipment, lower total processing costs