PDS® P-Type Product Sources
Saint-Gobain Advanced Ceramics is the leading supplier of solid planar diffusion sources to the semiconductor industry. PDS® Products Boron Nitride P-Type Product sources are used for doping silicon wafers.
Sources for P-Type doping use hexagonal boron nitride powder, made by reacting boric acid and ammonia at high temperatures, as the starting material. Boron Nitride powder, in combination with other ingredients, is hot pressed to form billets, machined to the desired diameter and then sliced into wafers.
PDS® Products Boron Nitride P-Type Product Applications
| Analog|| Sm. Sig.|| Diode|
| Transistor|| Mixed Signal|| Power|
| Optoelectronics|| Transistor|| Etch Stop|
| Telecom|| MOSFET|| MEMS|
| Thyristor|| Rectifier|| Isolation|
| P-Channel|| Resistor|| Source|
| Base|| Drain|| Guard Rings|
| Gate|| P+|| P-Well|
| Buried Layer|| || |
BN-1250 planar diffusion sources were introduced 35 years ago for high temperature depositions. Recently, we re-examined these recommendations, using the PDS products class 100 Cleanroom. As a result, we have developed new instructions for use of BN-1250. Diffusion processing now includes the use of 1% oxygen during the soak step.
We have two documents incorporating the New Processing Recommendations at 1050°C and 1150°C (documents at right).